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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3511
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3511 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
? Super low on-state resistance:
PART NUMBER
2SK3511
2SK3511-S
2SK3511-ZJ
2SK3511-Z
PACKAGE
TO-220AB
TO-262
TO-263
TO-220SMD Note
R DS(on) = 12.5 m ? MAX. (V GS = 10 V, I D = 42 A)
? Low C iss : C iss = 5900 pF TYP.
? Built-in gate protection diode
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25°C)
V DSS
V GSS
I D(DC)
75
± 20
± 83
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 260
A
Total Power Dissipation (T C = 25°C)
Total Power Dissipation (T A = 25°C)
Channel Temperature
Storage Temperature
P T
P T
T ch
T stg
100
1.5
150
–55 to +150
W
W
°C
°C
(TO-262)
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I AS
E AS
52
250
A
mJ
Notes 1. PW ≤ 10 μ s, Duty cycle ≤ 1%
2. Starting T ch = 25°C, V DD = 35 V, R G = 25 ?, V GS = 20 → 0 V
THERMAL RESISTANCE
(TO-263, TO-220SMD)
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A )
1.25
83.3
° C/W
° C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15617EJ1V0DS00 (1st edition)
Date Published May 2002 NS CP(K)
Printed in Japan
?
2001
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